Silicon Test Die Wire Bondable     3-Row Die   More Die   Flip Chips   Bumped Die   eWLP Die   Dummy Wafers   Thermal Die   Silicon Test Die Variety of Wire Bondable Patterns   Quick Guide:  Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  •   Package Selector Wire Bondable Die with Perimeter Daisy Chain (Al98% Si1% Cu1%) Nbr Pads Pad Matrix Pitch Die Size (mm) Die Thickness Waffle Tray Qty 5" (125mm) Wafer Qty Bondable Pad Single Die Order Number Unsawn Wafer Order Number Quick View 48 12x12 Single Row Daisy Chain 457µm 18 mil 6.3mm 250 mil 100~635µm 4~25 mil 25 Die 2" Tray 236 Die 5" Wafer ø102µm 4 mil FCN48G6.3A457-DC FCWN48G6.3A457-DC 64 16x16 Single Row Daisy Chain 254µm 10 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø95µm 3.7 mil FCN64K5A254-DC FCWN64K5A254-DC ø118µm 4.6 mil FCN64N5A254-DC FCWN64N5A254-DC ø150µm 6 mil FCN64U5A254-DC FCWN64U5A254-DC 88 22x22 Single Row Daisy Chain 204µm 8 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø80µm 3.1 mil FCN88K5A204-DC FCWN88K5A204-DC ø100µm 4 mil FCN88G5A204-DC FCWN88G5A204-DC 96 24x24 Single Row Daisy Chain 457µm 18 mil 12.7mm 500 mil 100~635µm 4~25 mil 36 Die 4" Tray 52 Die 5" Wafer ø102µm 4 mil FCN96G12.7A457-DC FCWN96G12.7A457-DC 112 28x28 Single Row Daisy Chain 152µm 6 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø55µm 2.1 mil FCN112L5A152-DC FCWN112L5A152-DC ø86µm 3.3 mil FCN112K5A152-DC FCWN112K5A152-DC □105µm 4 Mil SQ FCN112K5A152-DC FCWN112K5A152-DC 176 44x44 Single Row Daisy Chain 102µm 4 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer □82µm 3.2 Mil SQ FCN176J5A102-DC FCWN176J5A102-DC Ø56µm 2.2 Mil FCN176L5A102-DC FCWN176L5A102-DC Ø30µm 1.2 Mil FCN176M5A102-DC FCWN176M5A102-DC 176 44x44 Single Row Daisy Chain 204µm 8 mil 10.16mm 400 mil 100~635µm 4~25 mil 49 die 4" Tray 81 Die 5" Wafer ø102µm 4 mil FCN176G10C204-DC FCWN176G10C204-DC 220 44x66 Single Row Daisy Chain 204µm 8 mil 10 x 15mm 400x600 mil 100~635µm 4~25 mil 20 Die 4" Tray 50 Die 5" Wafer ø102µm 4 mil FCN220G10x15A204-DC FCWN220G10x15A204-DC 224 56x56 Single Row Daisy Chain 152µm 6 mil 10.16mm 400 mil 100~635µm 4~25 mil 49 Die 4" Tray 81 Die 5" Wafer ø55µm 2.1 mil FCN224L10A152-DC FCWN224L10A152-DC ø86µm 3.3 mil FCN224K10A152-DC FCWN224K10A152-DC □105µm 4 Mil SQ FCN224K10A152-DC FCWN224K10A152-DC 352 88x88 Single Row Daisy Chain 102µm 4 mil 10.16mm 400 mil 100~635µm 4~25 mil 49 Die 4" Tray 81 Die 5" Wafer □82µm 3.2 Mil SQ FCN352J10A102-DC FCWN352J10A102-DC - Ø56µm 2.2 Mil FCN352L10A102-DC FCWN352L10A102-DC Note 1: Standard Die thickness 635um (25MIL) Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL) Note 3: Large die with Daisy Chain available: 10x10mm, 15x15mm, 20x20mm, 10x15mm and 15x20mm, others Note 4: Full Array Daisy Chain die with pad counts up to 8000 pads   Stud Bump and Wire Bondable Die with Full Array Daisy Chain (Al98% Si1% Cu1%) Nbr Pads Pad Matrix Pitch Die Size (mm) Die Thickness Waffle Tray Qty 5" (125mm) Wafer Qty Bondable Pad Single Die Order Number Unsawn Wafer Order Number Quick View 317 18x18 Full Array 254µm 10 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø80µm 3.1 mil FCN317G5A254-DC FCWN317G5A254-DC ø100µm 4 mil FCN317K5A254-DC FCWN317K5A254-DC 569 24x24 Full Array 204µm 8 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø55µm 2.1 mil FCN569L5A204-DC FCWN569L5A204-DC 893 30x30 Full Array 152µm 6 mil 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer ø45µm 1.8 mil FCN893P5A152-DC FCWN893P5A152-DC 1268 36x36 Full Array 254µm 10 mil 10.2mm 200 mil 100~635µm 4~25 mil 49 Die 4" Tray 81 Die 5" Wafer ø100µm 4 mil FCN1268G10A254-DC FCWN1268G10A254-DC Note 1: Standard Die thickness 635um (25MIL) Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL) Note 3: Large die with Daisy Chain available: 10x10mm, 15x15mm, 20x20mm, 10x15mm and 15x20mm, others Note 4: Full Array Daisy Chain die with pad counts up to 8000 pads       PST Series - Thermal Test Die with Resistive Heaters Nbr Pads Pad Matrix Pitch Die Size (mm) Die Thickness Waffle Tray Qty 5" (125mm) Wafer Qty Bondable Pad Single Die Order Number Unsawn Wafer Order Number Photo Schematic 32 8x8 Perimeter Row X=230µm Y=230µm 2.5mm 100 mil 100~635µm 4~25 mil 100 Die 2" Tray 1600 Die 5" Wafer ø102µm 4.0 mil PST1-G2.5A PSTW1-G2.5A □122µm 4.8 mil PST1-B2.5A PSTW1-B2.5A 21 7x4 Perimeter Row X=460µm Y=690µm 3.81mm 150 mil 100~635µm 4~25 mil 64 Die 2" Tray 700 Die 5" Wafer ø100µm 4.0 mil PST2-G3.8A PSTW2-G3.8A Ø127µm 5.5 mil PST2-N3.8A PSTW2-N3.8A □150µm 5.9 mil PST2-C3.8A PSTW2-C3.8A 76 19x19 Perimeter Row X=231µm Y=231µm 5.08mm 200 mil 100~635µm 4~25 mil 36 Die 2" Tray 340 Die 5" Wafer □120µm 4.7 mil PST3-B5A PSTW3-B5A 48 14x10 Perimeter Row X=381µm Y=508µm 6.35mm 250 mil 100~635µm 4~25 mil 25 Die 2" Tray 236 Die 5" Wafer Ø100µm 4.0 mil PST4-G6.3A PSTW4-G6.3A 60 17x13 Perimeter Row X=381µm Y=508µm 7.8mm 306 mil 100~635µm 4~25 mil 64 Die 4" Tray 146 Die 5" Wafer Ø182µm 7.2 mil PST5-U7.8A PSTW5-U7.8A 82 22x18 Perimeter Row X=381µm Y=508µm 10mm 400 mil 100~635µm 4~25 mil 49 Die 4" Tray 80 Die 5" Wafer □183µm 7.2 mil PST6-D10A PSTW6-D10A Note 1: Standard Die thickness 635um (25MIL) Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL) Note 3: Applications: Use PST series test die to determin thermal characteristics of semiconductor packages, such as Juntion to Case or Junction to Ambient. PST test dies incorporate a heating element and two independent methos for on-die temperature monitoring. A four pad layout allows Kelvin connections. A temperature monitoriing circuit uses a bridge network. PST4 ar larger chips include serial five-diode temperature sense network in all four corners of the die. Meets JEDEC specification EIA/JESD51-4. Power up to 2.5W per die. Note 3: Stack Die: Multiple PST can be stacked in offset pryamid fashion for easy wire bonding. Thin to 127umm (5mils). Use 0.0381mm thick non-conductive die attach material between PST-2 to PST-4 and PST-4 to PST-6. Use electrically conductive die attach material between PST-6 and the substrate. Note 4: Resistive Heaters: All PST series die have a dual resistive heater bus bars (connection Rs to Rf). Note 5: Temperature Sense Network: All PST series die have serial five-diodes to sense temperature.       Wafer Box Cassette (Closed) Wafer Shipper (Open) Rotatable Model Rotatable Model                 Silicon Die with Daisy Chain Nbr Pads Description Pad Size Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 8 pairs Daisy Chain 60 x 160µm 1.0 x 1.0mm 250µm  Al 1.0µm 100 TD8-1.0-DC 151008 (A2) 16 pairs Daisy Chain 32 Wire Bonds 60 x 160µm 2.5 x 2.5mm 250µm  Al 1.0µm 100 TD16-2.5-DC 152516 (B2) 24 pairs Daisy Chain 48 Wire Bonds 60 x 360µm 4.0 x 4.0mm 250µm  Al 1.0µm 64 TD24-4.0-DC 154024 (C3) 8-Inch Wafer 174024 TD24~208 DWG 154000 ALL 64 pairs Daisy Chain 128 Wire Bonds 60 x 360µm 8.5 x 8.5mm 250µm ~725µm  Al 1.0µm 49 TD64-8-BG725-DC 140064 TD64-8-BG250-DC 150064 80 pairs Daisy Chain 160 Wire Bonds 60 x 360µm 12.856 x 12.856mm 250µm ~725µm  Al 1.0µm 36 TD80-12.5-BG250-DC 140080 TD80-12.5-BG725-DC 154080   Silicon Die with Sqaure Pads Nbr Pads Description Pad Size Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 16 Square Pad 60µm SQ. 1.0 x1.0mm 250µm  Al 1.0µm Ti 300Å 100 TD16-1.0-ISO 151016 (A1) 32 Square Pad 60µm SQ. 2.5 x 2.5mm 250µm  Al 1.0µm Ti 300Å 100 TD32-2.5-ISO 152533 (B1) 48 Square Pad 60µm SQ. 4.0 x 4.0mm 250µm  Al 1.0µm Ti 300Å 64pc 2" tray 196pc 4" Tray TD48-4.0-ISO 154048 (C1) 48 Square Pad 100µm SQ. 4.1 x 4.1mm 250µm  Al 1.0µm Ti 300Å 64pc 2" tray 196pc 4" Tray TD48-4.1-BG250 2" tray 254148 4" tray 254148 Unsawn 8" Wafer 174148 Sawn 8" BG Wafer 244148 96 Square Pad 100µm SQ. 8.3 x 8.3mm 250µm  Al 1.0µm Ti 300Å 49 TD96-8.3-BG250 4" tray 208296 Unsawn 8" Wafer 174148 Sawn 8" BG Wafer 248296     Silicon Die with Differential Pairs for RF/Microwave Parasitic Test Nbr Pads Description Pad Size Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 2 Pads With Ground Differential Pair Pad 60 x 160µm Ground Plane 1000µm SQ. 1.0 x1.0mm 250µm  Al 1.0µm Ti 300Å 100 TD2-1.0-DIF 151002 (A3) 2 Pads With Ground Differential Pair Pad 60 x 160µm Ground Plane 2500µm SQ. 2.5 x 2.5mm 250µm  Al 1.0µm Ti 300Å 100 TD2-2.5-DIF 152502 (B3) 2 Pads With Ground Differential Pair Pad 60 x 160µm Ground Plane 4000µm SQ. 4.0 x 4.0mm 250µm  Al 1.0µm Ti 300Å 64 TD2-4.0-DIF 151002 (A3)     Silicon Die with Full Metallization(Al or Au) Nbr Pads Description Pad Size Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm 250µm  Al 1.0µm Ti 300Å 100 TD1-1.0-BG250-W 151001 (A4) 1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm 508µm  Al 1.0µm Ti 300Å 100~400 TD1-1.0-BG508-W 251001 1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm 508µm  Au 1.0µm Ti 200Å 100~400 TD1-1.0-Au-BG508-W 351001 1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm 508µm  Al 1.0µm Ti 300Å 100 TD1-2.0-BG508-W 152001 1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm 508µm  Au 1.0µm Ti 200Å 100 TD1-2.0-Au-BG508-W 352001 1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm 250µm  Al 1.0µm Ti 300Å 100 TD1-2.5-BG250-W 152501 (B4) 1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm 508µm  Al 1.0µm Ti 300Å 100 TD1-2.5-BG508-W 252501 1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm 250µm  Al 1.0µm Ti 300Å 64 TD1-4.0-BG250-W 154001 (C4) 1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm 508µm  Al 1.0µm Ti 300Å 144 TD1-5.0-BG508-P 105001 1 Large Pad Fully Metallized 6000µm SQ. 6.0 x 6.0mm 200~ 725µm  Al 1.0µm Ti 300Å 121 TD1-6.0-BG508-P 106001 1 Large Pad Fully Metallized 10000µm SQ. 10.0 x 10.0mm 200~ 725µm  Al 1.0µm Ti 300Å 49 TD1-10.0-BG508-P 109901 Back grind die thickness 200~725um. Rectangular die available  • All pad sizes available. Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT8) • Tape and Reel (E) • JEDEC Tray (T) Conductive Metallization available: Al or Au     Silicon Die with 3-Rows of Bonding Pads Total I/O Pads Perimeter Rows Pad Size µm Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 380 3-Rows 50SQ,90SQ 175x55 5x3.25mm 300,500,750µm Al 1.0µm 144 TD380-5x3.2-BG300P TD380-5x3.2-BG500P TD380-5x3.2-BG750P Back grind die thickness 250~750um. Seed Layer Ti 300Å Other Sizes available  • Custom pad sizes and geometries available. Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT12) • Tape and Reel (E) • JEDEC Tray (T) Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr     JEDEC Moisture Sensitivity Level MSL-1   About Dielectric Materials: Silicon-dioxide insulator SiO2 k = 4.2 • Application: Gold and aluminum wire bonding Low-k Dielectric k < 3.0 • Application: Copper wire bonding and ultra-fine pitch pads < 90nm Competing Low-k process technologies: 1) Chemical vapor deposited (CVD) inorganic films such as carbon-doped oxides (SiOC) k~2.8 2) Spun-on dielectrics (SOD) - polymer organic films k 2.5~2.8 Challenge of bonding to pads with Low-k dielectrics: Spongy dielectric underlayer layer causes top metallization layer to cup and deflect, thus lowering optimal bondability. Package Selector Test Die Part Numbering System TD 16 - 2.5 - DC - BG250 W Die Type Nbr Pads   Die Size (mm)   Patterns   Backgrind Option Packaging Options TD=Singulated Die TDW = Sawn Wafer TDWU = Unsawn Wafer FA = Full Array Single Die 1=Fully Plated 2=Differential Pair 3~999=Bond Pads   Square Example 1.0 = 1.0x1.0mm 2.5 = 2.5x2.5mm 4.0 = 4.0x4.0mm Other sizes available Rectangular Example: 5x3= X5mm x Y3mm 3x5= X3mm x Y5mm Other sizes available   DC = Daisy Chain BUS = Fully Plated ISO = Isolated Pads DIF = Differential Pair FA = Full Array Blank = Isolated or Fully Plated   BG### = um thickness Example: BG250 = 250um = 10mils Blank = Undefined Single Die: W = 2" Waffle Pack P = 4" Waffle Pack T = JEDEC Tray E = Tape & Reel Unsawn Wafer: C = Cassette J = Jar/Canister Sawn Wafer: NH8 = Plastic Hoop 8" Ring (Non-UV) UH8 = Plastic Hooop 8" Ring (UV Tape) NT8 = Dicing Tape 8" Ring NH8 = Plastic Hoop 8" Ring NT12 = Dicing Tape 12" Ring UV8 = UV Tape 8" Ring UV12 = UV Tape 12" Ring Aluminum Pads: 1st Layer: SiO2 - 3000Å   •   2nd Layer: Ti - 300Å thick   •   3rd Layer: Al - 1.0µm thick  •   ( 1.0µm = 10000Å = 10KÅ) Copper and other pad platings available DBG: Dice before Gring process available for thin die 50um and 100um thick. Dimensional tolerance: ±5um and ±10um available on request. Die Daisy Chain Numbering System    1       5       10       08    Variations Packaging Size I/O 1 = Standard 2~9 = Variations Thickness Plating Materials etc. Single Die: 0 = 4" Waffle Tray (P) 5 = 2" Waffle Tray (W) Sawn Wafer Disco DTF-2-8-1 Format: 3 = UV Tape & Metal Frame ("UD") FF108  •   FF123 4 = Non-UV & Metal Frame ("ND") FF108  •   FF123 2 = Non-UV & Plastic Frame ("PD") FFP7290-11 Sawn Wafer K&S 350-104 Format: 1 = UV Tape & Metal Frame ("UK") FF105  •   FF123 8 = Non-UV & Metal Frame ("NK") FF105  •   FF123 9 = Non-UV & Plastic Frame ("PK") FFP7290-14 6 = Non-UV Wafer Expansion Hoops ("H") Unsawn Wafer Format: 7 = Clam Shell, Jar, etc 10 = 1.0x1.0mm 25 = 2.5x2.5mm 40 = 4.0x4.0mm Other Sizes Available 01 = 1 pad 08 = 8 pads 16 = 16 pads 24 = 24 pads 48 = 48 pads 99 = 100 pads       FCN Daisy Chain Die Part Numbering System FCN 64 N 5 A 254 BG250 -DC Bumpless Flip-Chip Nbr Bond Pads Passivation Opening Die Size (mm) Pad Plating Pitch (um) Optional Thickness Daisy Chain FCN = Single Die FCWN = Wafer 48~893 Round Opening M = Ø30µm P = Ø45µm L = Ø55µm K = Ø80~95µm G = Ø100µm N = Ø118µm U = Ø150µm Square Opening J = □82µm H = □105µm 5 = 5.08mm (200mil) 10 = 10.16mm (400mil) 15 = 15.24mm (600mil) 20 = 20.32mm (800mil) A = AL98% Cu1% Si1% 102µm = 4mil 152µm = 6mil 204µm = 8mil 254µm = 10mil 457µm = 18mil BG250 = 10mil BG200 = 8mil Blank=635um Other Available -DC = Daisy Chain     FCN Daisy Chain Numbering System    6       3       16       1       0    Bumpless Flip Chip Pad Pitch Pad Matrix Variation Passivation Opening 6 = Single Die Bumpless Flip Chip Pad Pitch 3 = 254µm (10mil) 4 = 100µm (4mil) 6 = 152µm (6mil) 8 = 200µm (8mil) 9 = 457µm (18mil) Perimeter Pads 12 = 48 pads 16 = 64 pads 22 = 88 pads 24 = 96 pads 28 = 112 pads 32 = 128 pads 36 = 144 pads 44 = 176 pads 48 = 192 Pads 56 = 192/224 64 = 192/256 66 = 264 pads 84 = 336 pads 88 = 352 pads 90 = 528 pads 94 = 448 pads 99 = 704 pads Full Array 18 = 317 pads 24 = 569 pads 30 = 893 pads 36 = 1268 pads 48 = 2384 pads 54 = 2853 pads 60 = 3572 pads 72 = 5072/5121 96 = 9104 pads 99 = 14288 pads Die Thickness: 0 = 635µm (25mil) 1 = 250µm (10mil) 2 = 200µm (8mil) 3 = 360µm (14mil) 4 = 430µm (17mil) 5 = 530µm (21mil) 6 = 150µm (6mil) 7 = 100µm (4mil) Other Thickness Available FCN48-457um 0 = Ø102µm FCN64-254um 0 = Ø118µm 10KÅ 1 = Ø118µm 24KÅ 2 = Ø95µm 3 = Ø150µm FCN88-204um 0 = Ø100µm 1 = Ø80µm FCN112-152um 0 = SQ105µm 1 = Ø86µm 2 = Ø55µm FCN176-102um 0 = SQ82µm 1 = Ø30µm 2 = Ø56µm FCN317-254um 0 = Ø80µm 1 = Ø100µm FCN569-204um 0 = Ø55µm FCN893-152um 0 = Ø45µm              Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding     More Products   Home     TopLine Corporation 95 Highway 22 W Milledgeville, GA 31061, USA Toll Free USA/Canada (800) 776-9888 International: 1-478-451-5000  •  Fax: 1-478-451-3000 Email: sales@topline.tv ©2018 TopLine. 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