Silicon Test Die
Wire Bondable
 
 
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Silicon Test Die
Variety of Wire Bondable Patterns
 
Quick Guide:  Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  •   Package Selector
 
Wire Bondable Die with Perimeter Daisy Chain (Al98% Si1% Cu1%)
Nbr
Pads
Bump Matrix Pitch Die Size
(mm)
Die
Thickness
Waffle Tray
Qty
5" (125mm)
Wafer Qty
Bondable
Pad
Order Number Ref Quick View
48 12x12
Perimeter
Daisy Chain
457µm
18 mil
6.3mm
250 mil
610µm
24 mil
25 Die
2" Tray
236 Die
5" Wafer
ø102µm
4 mil
FCN48G6.3A457-DC FBT
64 16x16
Perimeter
Daisy Chain
254µm
10 mil
5.08mm
200 mil
610µm
24 mil
36 Die
2" Tray
340 Die
5" Wafer
ø95µm
3.7 mil
FCN64K5.08A254-DC PB10
ø118µm
4.6 mil
FCN64N5.08A254-DC
ø150µm
6 mil
FCN64U5.08A254-DC
88 22x22
Perimeter
Daisy Chain
204µm
8 mil
5.08mm
200 mil
610µm
24 mil
36 Die
2" Tray
340 Die
5" Wafer
ø80µm
3.1 mil
FCN88K5.08A204-DC PB8
ø100µm
4 mil
FCN88G5.08A204-DC
96 24x24
Perimeter
Daisy Chain
457µm
18 mil
12.7mm
500 mil
630µm 36 Die
4" Tray
52 Die
5" Wafer
ø102µm
4 mil
FC96G12.7A457-DC FBT
x4
112 28x28
Perimeter
Daisy Chain
152µm
6 mil
5.08mm
200 mil
610µm
24 mil
36 Die
2" Tray
340 Die
5" Wafer
ø55µm
2.1 mil
FC112L5A152-DC PB6
ø86µm
3.3 mil
FC112K5A152-DC
□105µm
4 Mil SQ
FC112K5A152-DC
176 44x44
Perimeter
Daisy Chain
102µm
4 mil
5.08mm
200 mil
610µm
24 mil
36 Die
2" Tray
340 Die
5" Wafer
□82µm
3.2 Mil SQ
FC176J5A102-DC PB4
Ø56µm
2.2 Mil
FC176L5A102-DC
176 44x44
Perimeter
Daisy Chain
204µm
8 mil
10.2mm
400 mil
610µm
24 mil
49 die
4" Tray
81 Die
5" Wafer
ø102µm
4 mil
FC176G10C204-DC PB8
x4
220 44x66
Perimeter
Daisy Chain
204µm
8 mil
10 x 15mm
400x600 mil
610µm
24 mil
20 Die
4" Tray
50 Die
5" Wafer
ø102µm
4 mil
FC220G10x15A204-DC PB8
x6
352 88x88
Perimeter
Daisy Chain
102µm
4 mil
10.16mm
400 mil
610µm
24 mil
49 Die
4" Tray
81 Die
5" Wafer
□82µm
3.2 Mil SQ
FC352J10A102-DC PB4
4x
-
Ø56µm
2.2 Mil
FC352L10A102-DC
Note 1: Die thinning available to 100um (4mil) thick
Note 2: Large die with Daisy Chain available: 10mm SQ, 15mm SQ, 20mm SQ, 10x15mm and 15x20mm
Note 3: Full Array Daisy Chain die for pad counts up to 8000 pads
 
Stud Bump and Wire Bondable Die with Full Array Daisy Chain (Al98% Si1% Cu1%)
Nbr
Pads
Bump Matrix Pitch Die Size
(mm)
Die
Thickness
Bondable
Pad
Waffle Tray
Qty
5" (125mm)
Wafer Qty
Order Number Ref Quick View
317 18x18
Full Array
254µm
10 mil
5.08mm
200 mil
610µm
24 mil
ø100µm
4 mil
36 Die
2" Tray
340 Die
5" Wafer
FCN317G5.08A254-DC FA10
569 24x24
Full Array
204µm
8 mil
5.08mm
200 mil
610µm
24 mil
ø100µm
4 mil
36 Die
2" Tray
340 Die
5" Wafer
FC569G5.08E204-DC FA8
893 30x30
Full Array
152µm
6 mil
5.08mm
200 mil
610µm
24 mil
ø45µm
4 mil
36 Die
2" Tray
340 Die
5" Wafer
FCN893P5A152-DC FA6
-
1268 36x36
Full Array
254µm
10 mil
10.2mm
200 mil
610µm
24 mil
ø100µm
4 mil
49 Die
4" Tray
340 Die
5" Wafer
FCN1268G10A254-DC FA10
x4
   
Silicon Die with Daisy Chain
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
8 pairs Daisy Chain 60 x 160µm 1.0 x 1.0mm
250µm  Al 1.0µm 100 TD8-1.0-DC
151008 (A2)
16 pairs Daisy Chain
32 Wire Bonds
60 x 160µm 2.5 x 2.5mm
250µm  Al 1.0µm 100 TD16-2.5-DC
152516 (B2)
24 pairs Daisy Chain
48 Wire Bonds
60 x 360µm 4.0 x 4.0mm
250µm  Al 1.0µm 64 TD24-4.0-DC
154024 (C3)

8-Inch Wafer
174024


TD24~208
DWG 154000 ALL
64 pairs Daisy Chain
128 Wire Bonds
60 x 360µm 8.5 x 8.5mm
250µm
~725µm 
Al 1.0µm 49 TD64-8-BG725-DC
140064

TD64-8-BG250-DC
150064
80 pairs Daisy Chain
160 Wire Bonds
60 x 360µm 12.856 x 12.856mm
250µm
~725µm 
Al 1.0µm 36 TD80-12.5-BG250-DC
140080

TD80-12.5-BG725-DC
154080
 
Silicon Die with Sqaure Pads
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
16 Square Pad 60µm SQ. 1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD16-1.0-ISO
151016 (A1)
32 Square Pad 60µm SQ. 2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD32-2.5-ISO
152533 (B1)
48 Square Pad 60µm SQ. 4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64pc 2" tray
196pc 4" Tray
TD48-4.0-ISO
154048 (C1)
48 Square Pad 100µm SQ. 4.1 x 4.1mm
250µm  Al 1.0µm
Ti 300Å
64pc 2" tray
196pc 4" Tray
TD48-4.1-BG250
2" tray 254148
4" tray 254148

Unsawn 8" Wafer 174148
Sawn 8" BG Wafer 244148
96 Square Pad 100µm SQ. 8.3 x 8.3mm
250µm  Al 1.0µm
Ti 300Å
49 TD96-8.3-BG250
4" tray 208296

Unsawn 8" Wafer 174148
Sawn 8" BG Wafer 248296
 
 
Silicon Die with Differential Pairs for RF/Microwave Parasitic Test
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
1000µm SQ.
1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD2-1.0-DIF
151002 (A3)
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
2500µm SQ.
2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD2-2.5-DIF
152502 (B3)
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
4000µm SQ.
4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64 TD2-4.0-DIF
151002 (A3)
 
 
Silicon Die with Full Metallization
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD1-1.0-BG250-W
151001 (A4)
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
508µm  Al 1.0µm
Ti 300Å
100~400 TD1-1.0-BG508-W
251001
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
508µm  Au 1.0µm
Ti 200Å
100~400 TD1-1.0-Au-BG508-W
351001
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
508µm  Au 1.0µm
Ti 200Å
4000
4" wafer
TD1-1.0-Au-BG508-NH4
361001
1 Large Pad Fully Metallized 1500µm SQ. 1.5 x1.5mm
508µm  Al 1.0µm
Ti 300Å
100~169 TD1-1.5-BG508-W
251501
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
508µm  Al 1.0µm
Ti 300Å
100 TD1-2.0-BG508-W
152001
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
508µm  Au 1.0µm
Ti 200Å
100 TD1-2.0-Au-BG508-W
352001
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
508µm  Au 1.0µm
Ti 200Å
1500
4" Wafer
TD1-2.0-Au-BG508-NH4
362001
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD1-2.5-BG250-W
152501 (B4)
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
508µm  Al 1.0µm
Ti 300Å
100 TD1-2.5-BG508-W
252501
1 Large Pad Fully Metallized 3000µm SQ. 3.0 x 3.0mm
508µm  Al 1.0µm
Ti 300Å
100 TD1-3.0-BG508-W
153001
1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64 TD1-4.0-BG250-W
154001 (C4)
1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
1500
8" Wafer
TD1-4.0-BG250-NH8
244001
1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm
508µm  Al 1.0µm
Ti 300Å
144 TD1-5.0-BG508-P
105001
1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm
250µm  Al 1.0µm
Ti 300Å
1000
8" Wafer
TD1-5.0-BG250-NH8
245001
1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm
508µm  Al 1.0µm
Ti 300Å
1000
8" Wafer
TD1-5.0-BG2508-NH8
145001
1 Large Pad Fully Metallized 6000µm SQ. 6.0 x 6.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
121 TD1-6.0-BG508-P
106001
1 Large Pad Fully Metallized 7000µm SQ. 7.0 x 7.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
81 TD1-7.0-BG508-P
107001
1 Large Pad Fully Metallized 8000µm SQ. 8.0 x 8.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
64 TD1-8.0-BG508-P
108001
1 Large Pad Fully Metallized 10000µm SQ. 10.0 x 10.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
49 TD1-10.0-BG508-P
109901
1 Large Pad Fully Metallized 12000µm SQ. 12.0 x 12.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
36 TD1-12.0-BG508-P
209201
1 Large Pad Fully Metallized 15000µm SQ. 15.0 x 15.0mm
200~
725µm 
Al 1.0µm
Ti 300Å
25 TD1-15.0-BG508-P
209501
Back grind die thickness 200~725um.
Rectangular die available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT8) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
Silicon Die with 3-Rows of Bonding Pads
Total I/O
Pads
Perimeter
Rows
Pad Size
µm
Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
380 3-Rows 50SQ,90SQ
175x55
5x3.25mm
300,500,750µm Al 1.0µm 144 TD380-5x3.2-BG300P
TD380-5x3.2-BG500P
TD380-5x3.2-BG750P
Back grind die thickness 250~750um.
Seed Layer Ti 300Å
Other Sizes available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT12) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
JEDEC Moisture Sensitivity Level MSL-1
 
About Dielectric Materials:
Silicon-dioxide insulator SiO2 k = 4.2 • Application: Gold and aluminum wire bonding
Low-k Dielectric k < 3.0 • Application: Copper wire bonding and ultra-fine pitch pads < 90nm

Competing Low-k process technologies:
1) Chemical vapor deposited (CVD) inorganic films such as carbon-doped oxides (SiOC) k~2.8
2) Spun-on dielectrics (SOD) - polymer organic films k 2.5~2.8

Challenge of bonding to pads with Low-k dielectrics:
Spongy dielectric underlayer layer causes top metallization layer to cup and deflect, thus lowering optimal bondability.
Package Selector
Test Die Part Numbering System
TD 16 - 2.5 - DC - BG250 W
Die Type Nbr Pads   Die Size (mm)   Patterns   Backgrind
Option
Packaging
Options
TD=Singulated Die

TDW = Sawn Wafer

TDWU = Unsawn Wafer

FA = Full Array
Single Die
1=Fully Plated

2=Differential Pair

3~999=Bond Pads
  Square Example
1.0 = 1.0x1.0mm
2.5 = 2.5x2.5mm
4.0 = 4.0x4.0mm
Other sizes available


Rectangular Example:
5x3= X5mm x Y3mm
3x5= X3mm x Y5mm
Other sizes available
  DC = Daisy Chain

BUS = Fully Plated

ISO = Isolated Pads

DIF = Differential Pair

FA = Full Array

Blank = Isolated
or Fully Plated
  BG### = um thickness

Example:
BG250 = 250um = 10mils

Blank = Undefined
Single Die:
W = 2" Waffle Pack
P = 4" Waffle Pack
T = JEDEC Tray
E = Tape & Reel

Unsawn Wafer:
C = Cassette
J = Jar/Canister

Sawn Wafer:
NH8 = Plastic Hoop 8" Ring (Non-UV)
UH8 = Plastic Hooop 8" Ring (UV Tape)
NT8 = Dicing Tape 8" Ring
NH8 = Plastic Hoop 8" Ring
NT12 = Dicing Tape 12" Ring
UV8 = UV Tape 8" Ring
UV12 = UV Tape 12" Ring
Aluminum Pads: 1st Layer: SiO2 - 3000Å   •   2nd Layer: Ti - 300Å thick   •   3rd Layer: Al - 1.0µm thick  •   ( 1.0µm = 10000Å = 10KÅ)
Copper and other pad platings available
DBG: Dice before Gring process available for thin die 50um and 100um thick.
Dimensional tolerance: ±5um and ±10um available on request.
Die Daisy Chain Numbering System
   1       5       10       08   
Variations Packaging Size I/O
1 = Standard

2~9 = Variations
Thickness
Plating
Materials
etc.
Single Die:
0 = 4" Waffle Tray (P)
5 = 2" Waffle Tray (W)


Sawn Wafer Disco DTF-2-8-1 Format:
3 = UV Tape & Metal Frame ("UD") FF108  •   FF123
4 = Non-UV & Metal Frame ("ND") FF108  •   FF123
2 = Non-UV & Plastic Frame ("PD") FFP7290-11

Sawn Wafer K&S 350-104 Format:
1 = UV Tape & Metal Frame ("UK") FF105  •   FF123
8 = Non-UV & Metal Frame ("NK") FF105  •   FF123
9 = Non-UV & Plastic Frame ("PK") FFP7290-14

6 = Non-UV Wafer Expansion Hoops ("H")

Unsawn Wafer Format:
7 = Clam Shell, Jar, etc
10 = 1.0x1.0mm

25 = 2.5x2.5mm

40 = 4.0x4.0mm

Other Sizes Available
01 = 1 pad

08 = 8 pads
16 = 16 pads
24 = 24 pads
48 = 48 pads
99 = 100 pads
 
 
 
        
 
Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  
 
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Milledgeville, GA 31061, USA
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